BASiC 3C awarded 250k$ to develop low cost 3C SiC wafers

Gov. John Hickenlooper and the Colorado Office of Economic Development and International Trade (OEDIT) announced the Advanced Industry Accelerator Grant Program grantees.

 BASiC 3C is developing cost effective cubic Silicon Carbide (3C-SiC) wafers produced in Colorado for power device manufacturers. While SiC is becoming the material of choice over Silicon (Si) and Gallium Nitride (GaN) for middle to high-end power device development, the traditional “4H” SiC material continues to experience issues in defects, stress, wafer diameter scaling and costs.

The “HFCVD” from BASiC 3C process for manufacturing 3C Silicon Carbide wafers is a breakthrough technology that enables a new generation of power devices for existing and new markets.The patented technology delivers 3C-SiC substrates which enable price/performance leading devices operating at higher voltage, higher power, faster switching speeds and elevated temperatures.

It allows scalable “3C” SiC wafers (4”, 6”, 8” & 12”) with less defects, improved electron mobility that yields lower cost devices with greater performance.

The result is smaller, lighter, efficient electric vehicle power trains and more efficient components in the SmartGrid.

BASiC 3C is backed by Innosphere Rocky mountain incubator.