Infineon announces HybridPACK Double Sided Cooling for October 2016

Infineon Technologies AG presents its latest power module family HybridPACK™ Double Sided Cooling (DSC) for hybrid and electric vehicles at the PCIM 2016 tradeshow. The new power modules have dimensions of 42 mm x 42.4 mm x 4.77 mm. They target HEV applications such as main inverters and generators with a typical power range of 40 to 50 kW. In order to support higher power, they can be used in parallel configurations.

Infineon hybrid vehicle power module double side cooling

With only 15 nH, the stray inductance is very low while blocking voltage was increased to 700 V. Both factors support the development of inverter systems with reduced switching losses of about 25 percent and very high efficiency. Thanks to the integrated isolation, the module can be directly attached to a cooler without external isolation thus simplifying system integration. Each integrated IGBT chip is equipped with an on-chip current sensor for overcurrent protection. In addition, an on-chip temperature sensor provides derating and fast shut-off in case of over-temperature. The direct and precise sensing improves system monitoring. It also helps to simplify the functional safety architecture of automotive system suppliers and car manufacturers.

By combining double sided chip cooling with electrical isolation of the heat sinks, the thermal resistance R thJC of the HybridPACK DSC is significantly reduced to 0.1 Kelvin/Watt (K/W). In comparison, today’s power module HybridPACK 1 has a thermal resistance of 0.12 K/W. The HybridPACK DSC module technology also improves the electrical performance. Stray inductance is one major parameter, defined by module size and the careful routing of the current path through the module. The HybridPACK DSC value of only 15 nH is about 40 percent lower compared to reference modules. The result is a reduction of switching losses by 25 percent.

Availability of HybridPACK DSC power modules

The first member of the HybridPACK DSC family is the FF400R07A01E3_S6 implementing I Cnom of 400 A and V CES of 700 V in half-bridge configuration. Engineering samples will be available in September 2016. A further product in the family implementing I Cnom of 200 A and V CES of 700 V in a full-bridge configuration will be offered as engineering samples in October 2016. Further variants featuring different power ranges are under development.

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Toshiba announces DTMOS V, its 5th generatin of SJ MOSFET

Toshiba Electronics Europe is set to announce the development of its next generation of superjunction (SJ) deep trench semiconductor technology for high-efficient power MOSFETs.  Devices based on the new DTMOS V process operate with lower EMI noise and reduced on resistance (RDS(ON)) compared to previous DTMOS IV MOSFETs.

 

As with the previous DTMOS IV semiconductor technology, DTMOS V is based on a single epitaxial process involving ‘deep trench etching’ followed by P-type epitaxial growth.  The deep trench filling process results in a narrowing of cell pitch and a lowering of RDS(ON) when compared with more conventional planar processes. Toshiba’s deep trench process allows an improved thermal coefficient of RDS(ON) compared to conventional super junction MOSFETs using multi epitaxial growth process.

With DTMOS V, Toshiba has been able to reduce RDS(ON) of the DPAK TK290P60Y by up to 17% compared with the lowest RDS(ON)available from the TK12P60W DTMOS IV MOSFET. The company has also further optimised the trade-off between switching performance and EMI noise.

DTMOS V MOSFETs will simplify the design and improve the performance of power conversion applications, including switching power supplies, power factor correction (PFC) designs, LED lighting and other AC/DC applications. The first MOSFETs based on the fifth generation process will offer ratings of 600V and 650V and be supplied in DPAK (TO-252) and TO-220SIS (smart isolation) packaging. Maximum ON resistance ratings will range from just 0.29Ω to 0.56Ω.

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Hirex engineering to test and qualify ExagaN G-FET GaN transistors

Exagan, a start-up manufacturing gallium nitride (GaN) semiconductor technology for power electronics has begun a strategic partnership to develop and commercialize GaN-on-silicon products withHIREX Engineering, a company of Alter Technology Group (TÜV NORD GROUP’s Aerospace and Electronics Business Unit). The partnership’s goal is to establish the reliability and quality of GaN-on-silicon power devices.
Exagan will work closely with HIREX Engineering, a leader in reliability testing and qualification of ICs and discrete semiconductors for aerospace and industrial high-reliability applications. HIREX Engineering is located near Toulouse, France. Together, the companies will test and qualify Exagan’s G-FET™ products, which are fabricated with standard 200-mm silicon processing and proprietary G-Stack™ technology. G-FETs are used in making smaller, more efficient power converters that have a broad range of applications (plug-in hybrid and full-electric vehicles, solar energy, industrial applications, or charging of all mobile electronic devices).

“This dynamic partnership will help to propel GaN market development by pioneering test methodologies and measurement processes that make it easier for makers of electrical converters to implement GaN in improving their products,” said Frédéric Dupont, president and CEO of Exagan.

“This timing is perfect to combine Exagan’s strengths with those of the top European specialist in high-reliability testing. GaN technology has matured to deliver the high performance of SiC (silicon carbide) devices at silicon ICs’ price and quality levels, and our key markets are ready for this next-generation solution.”

“Through its participation, HIREX Engineering will expand its expertise and business portfolio to include advanced power GaN technology and the end products it enables. We hope to establish robust and easy-to-reference product parameters for GaN that will allow fast integration in electrical converters,” said Luis Gomez, Alter Technology Group CEO.

“We are confident that GaN’s bulletproof reliability will present remarkable advantages in the fast-growing power electronics market,” said Dr. Guido Rettig, TÜV NORD GROUP CEO.

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Infineon unveils 1200 V Silicon Carbide MOSFET

Infineon Technologies AG has unveiled a revolutionary silicon carbide (SiC) MOSFET technology.

“For more than twenty years, Infineon has been at the forefront of developing SiC solutions which address demands for energy savings, size reduction, system integration and improved reliability,” said Dr. Helmut Gassel, President of Infineon’s Industrial Power Control Division. “Infineon has manufactured millions of products containing SiC devices, while our Schottky diode and J-FET technologies have allowed designers to achieve power density and performance not possible with conventional silicon. The strategy has now taken a significant step forward encompassing power MOSFETs that raise the benefits available from SiC technology to a new level, which has never before been possible.”

The new 1200 V SiC MOSFETs have been optimized to combine reliability with performance. They operate with ‘benchmark’ dynamic losses that are an order of magnitude lower than 1200 V silicon (Si) IGBTs. This initially supports system improvements in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) or charger/storage systems, while later configurations will also extend support to industrial drives.

The MOSFETs are fully compatible with the +15 V/-5 V voltages typically used to drive IGBTs. They combine a benchmark threshold voltage rating (V th) of 4 V with short-circuit robustness required by the target applications and fully controllable dv/dt characteristics. Key benefits over Si IGBT alternatives include temperature-independent switching losses and threshold-voltage-free on-state characteristics.

The new MOSFETs are based on a state-of-the-art trench semiconductor process and represent the latest evolution of Infineon’s comprehensive family of CoolSiC technologies. This family includes Schottky diodes and 1200 V J-FET devices and a range of hybrid solutions that integrate a Si IGBT and SiC diode in a module device.

The first discrete 1200 V CoolSiC MOSFETs feature on-resistance (R DS(ON)) ratings of just 45 mΩ. They will be available in 3-pin and 4-pin TO-247 packages targeted at photovoltaic inverters, UPS, battery charging and energy storage applications. Both devices are ready for use in synchronous rectification schemes thanks to the integration of a commutation robust body diode operating with nearly zero reverse recovery losses. The 4-pin package incorporates an additional (Kelvin) connection to the source, which is used as a reference potential for the gate driving voltage. By eliminating the effect of voltage drops due to source inductance, this further reduces switching losses, especially at higher switching frequencies.

Infineon has also announced 1200 V ‘Easy1B’ half-bridge and booster modules based on the SiC MOSFET technology. Combining PressFIT connections with a good thermal interface, low stray inductance and robust design, each module is available with R DS(ON)rating options of 11 mΩ and 23 mΩ.

Availability

Infineon will start sampling for target applications in the second half of 2016, with volume production planned for 2017. More information is available at www.infineon.com/coolSiC.

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Texas instruments launch 600V/12A GaN IC

Texas Instruments today announced the availability of 600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering samples, making TI the first and only semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution. The new 12-A LMG3410 power stage coupled with TI’s analog and digital power-conversion controllers enables designers to create smaller, more efficient and higher-performing designs compared to silicon FET-based solutions. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing and renewable energy applications.

“With over 3 million hours of reliability testing, the LMG3410 gives power designers the confidence to realize the potential of GaN and to rethink their power architecture and systems in ways not feasible before,” said Steve Lambouses, TI vice president of high-voltage power solutions. “Expanding on TI’s reputation for manufacturing capability and extensive system-design expertise, the new power stage is a significant step for the GaN market.”

With its integrated driver and features such as zero reverse-recovery current, the LMG3410 provides reliable performance, especially in hard-switching applications where it can dramatically reduce switching losses by as much as 80 percent. Unlike stand-alone GaN FETs, the easy-to-use LMG3410 integrates built-in intelligence for temperature, current and undervoltage lockout (UVLO) fault protection.

Proven manufacturing and packaging expertise
The LMG3410 is the first semiconductor integrated circuit (IC) to include GaN FETs manufactured by TI. Building on years of expertise in manufacturing and process technologies, TI creates its GaN devices in a silicon-compatible factory and qualifies them with practices that are beyond the typical Joint Electron Device Engineering Council (JEDEC) standards to ensure the reliability and robustness of GaN for demanding use cases. Easy-to-use packaging will help increase the adoption of GaN power designs in applications such as power factor controller (PFC) AC/DC converters, high-voltage DC bus converters and photovoltaic (PV) inverters.

Key features and benefits of the LMG3410

  • Double the power density. The 600-V power stage delivers 50 percent lower power losses in a totem-pole PFC compared with state-of-the-art silicon-based boost power-factor converters. The reduced bill of materials (BOM) count and higher efficiency enable a reduction in power-supply size of as much as 50 percent.
  • Reduced packaging parasitic inductance. The new device’s 8-mm-by-8-mm quad flat no-lead (QFN) package decreases power loss, component voltage stress and electromagnetic interference (EMI) compared to discrete GaN solutions.
  • Enables new topologies. GaN’s zero reverse-recovery charge benefits new switching topologies, including totem-pole PFC and LLC topologies to increase power density and efficiency.

Expanding the GaN ecosystem
To support designers who are taking advantage of GaN technology in their power designs, TI is also introducing new products to expand its GaN ecosystem. The LMG5200POLEVM-10, a 48-V to 1-V point-of-load (POL) evaluation module, will include the new TPS53632G GaN FET controller, paired with the 80-V LMG5200 GaN FET power stage. The solution allows for efficiency as high as 92 percent in industrial, telecom and datacom applications.

Availability and pricing
TI will offer a development kit that includes a half-bridge daughtercard and four LMG3410 IC samples. A second kit contains a system-level evaluation motherboard. When used together, these two kits enable immediate bench testing and design. The two development kits are available for purchase now in the TI store and are priced at $299.00 and $199.00, respectively.

 

For more details, see www.ti.com/lmg3410-pr.

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Valeo plans a joint venture with Siemens for powertrains

The joint venture would capitalize on Valeo’s and Siemens’ leading positions in their respective sectors, with the ultimate goal of creating a global leader in the fast-growing market of automotive electrification.

The two industry leaders would join forces to offer the most complete and innovative range of high voltage (above 60V) components and systems for all types of electric vehicles (hybrids, plug-in hybrids and full electric vehicles): e-motors, onboard chargers, inverters, DC/DC converters.

Valeo would contribute to the joint venture its high voltage power electronics business (onboard chargers, inverters, DC/DC converters) employing around 200 people of which 90 are based in France. Its under-60V powertrain activity would not be part of this joint venture. Siemens would contribute to the joint venture its E-Car Powertrain Systems Business Unit (e-motors, inverters) employing around 500 people of which 370 are based in Germany and 130 in China.

The joint venture would be headquartered in Erlangen, Germany.

The newly created entity would leverage on Valeo’s and Siemens’ strong complementarity in terms of product portfolio and geographical spread generating synergies in manufacturing and sourcing. Its strengths in production and development would allow to target customers on a global level as well as in specific key markets.

“We are delighted at the perspective of combining our strengths with Siemens in electrified powertrain systems,” said Jacques Aschenbroich, Chairman and Chief Executive Officer of Valeo.

“With the expertise offered by Siemens, a leader in power electronics and electric motor products, Valeo would maintain its technological lead by offering a comprehensive line-up of technologies ranging from micro-hybrid to all-electric solutions. This joint venture also illustrates the ability of European companies to develop leading industrial partnerships to bring breakthrough technologies to the global market.”

 

Klaus Helmrich, Member of the Managing Board of Siemens AG, said: “The Valeo Siemens joint venture is yet another example of forming a true Europe based company. Combining Siemens’ extensive experience in electric motors and inverters with Valeo’s automotive business expertise and worldwide customer base would provide both companies with a solid basis in the growing electro mobility market.”

The project is subject to consultation of the employee representatives and approval by the relevant authorities.

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Freebird and EPC partner on Rad-Hard GaN power conversion

Freebird Semiconductor, a US manufacturer of high reliability GaN HEMTs, and Efficient Power Conversion (EPC) have entered into an agreement to develop products for high reliability, space and harsh environment applications based on EPC’s eGaN power transistors and ICs.

Simon Wainwright, president and CEO of Freebird Semiconductor said: “GaN technology will permit space applications to use the latest in high performance semiconductor material, whereas using silicon-based components in these applications produces systems that are behind the latest performance curves.”

“The superior conductivity and switching characteristics of GaN devices allow designers to greatly reduce system power losses, size, and weight. Given GaN’s superior state-of-the-art performance, coupled with its demonstrated ability to operate reliably under harsh environmental conditions and high radiation, GaN devices have a very bright future in space applications. We are excited to be supporting Freebird in the development of their GaN-based products,”

noted Alex Lidow, EPC CEO and co-founder.

In addition to collaborating on power systems product development, the two companies will be active in publishing the results of their work and giving joint presentations at professional conferences.

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Ideal Power report to successfully manufacture B-Tran transistor

Ideal Power Inc., a developer of innovative power conversion technologies, reported its semiconductor fabricator successfully tested Bi-Directional Bi-Polar Junction TRANsistor (B-TRAN™) silicon dies and test results validate key characteristics of the semiconductor power switch. The test results can be found in the company’s updated B-TRAN White Paper. The results confirm central B-TRAN™ elements and operational modes are consistent with third party device simulations that predict significant performance and efficiency improvements over conventional power switches such as SCRs, IGBTs and MOSFETs.

B-TRAN™ device is a symmetric double-sided structure that presents opportunities for high current density operation at high efficiency.

“This validation of key characteristics of the B-TRAN™ technology is a significant step forward in demonstrating B-TRAN’s ability to improve energy efficiency across a wide range of products and applications,”

said Dr. Richard Blanchard, B-TRAN™ co-inventor and holder of over 200 patents primarily related to power semiconductors including the widely used trench MOSFET.

“The device has tremendous implications for the power industry.”

“These exciting results of the first tested B-TRAN™ structures validate key characteristics of the device and confirm our belief that B-TRANs can be a disruptive new force in many power conversion applications,” said Bill Alexander, CTO of Ideal Power and co-inventor of the B-TRAN™. “The predicted extremely low forward voltage drop and fast, low loss switching of the B-TRAN™ are each approximately ten times better than conventional switches. B-TRAN’s high current density and native bi-directional capability can lead to very high efficiency power control and conversion at very low cost points. We expect these anticipated efficiency improvements to translate to a substantial cost-performance advantage over current generation power semiconductor devices, which opens a multi-billion dollar market opportunity for the B-TRAN™ and is generating licensing inquiries from power semiconductor companies.”

Ideal Power plans to introduce the B-TRAN™ into the rapidly growing IGBT power semiconductor market, estimated to be close to $5 billion in 2015 according to Point The Gap . The next major milestone for commercializing the B-TRAN™ will be testing a fully-packaged device.

Ideal Power believes its new B-TRAN™ technology can potentially address up to 50% of the power semiconductor market as a replacement for older, less efficient power switch technologies such as IGBTs and MOSFETs, as well as the newer gallium nitride (GaN) and silicon carbide (SiC) devices. Potential addressable markets for B-TRAN-based products include very low loss solid-state DC and AC contactors, electric vehicle drivetrains, variable frequency drives, solar photovoltaic inverters, bi-directional energy storage and microgrid power conversion systems, matrix converters and other power conversion products.

Based on third party simulations and testing to date, the Company expects the B-TRAN to deliver 10 to 200 times the cost-performance of current power semiconductor switches, depending on the switch type and configuration, with cost-performance being defined as the combination of device cost and on-state resistance. For a given cost, the B-TRAN™ is expected to have 10 to 200 times lower on-state resistance, while simultaneously having up to 10 times faster switching than other silicon-based switches.

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CISSOID delivers first full-SiC IPM to Thales

CISSOID, the leader in high-temperature and extended lifetime semiconductor solutions, announces the delivery of the first prototypes of a 3-phase 1200V/100A SiC MOSFET Intelligent Power Modules (IPM) to Thales Avionics Electrical Systems. This module, developed with the support of Clean Sky Joint Undertaking, will help increasing power converters density, by decreasing weight and size, for power generation and electromechanical actuators in More-Electrical Aircrafts.

This IPM offers an optimal integration of the gate driver with power transistors together in order to take advantage of the full benefits of Silicon Carbide (SiC), i.e. low switching losses and high operating temperature. Leveraging on HADES2® Isolated Gate Driver that incorporates years of development in driving SiC transistors, it combines advanced packaging technologies enabling a reliable operation of power modules in extreme conditions.

For this Aerospace module, a 3-phase power inverter topology was selected while other topologies are being investigated for HEV and Railways projects. In this 3-phase topology, each of the 6 switch positions includes a 100A SiC MOSFET transistor and a 100A SiC Schottky free-wheeling diode. These devices can block voltages up to 1200V, which provide enough headroom against over-voltages in a 540V Aerospace DC bus, and the module is designed to be easily upgraded with 1700V/150A SiC devices. The transistors have a typical On resistance of 12.5mOhms or 8.5mOhms depending on their current rating, either 100A or 150A.

CISSOID SiC power module Avionics more electric aircraft

Special care was put on thermal aspects during the design of the module. First, all the materials have been selected to allow reliable operation at high junction temperatures, up to 200°C with peaks at 225°C, in order to decrease cooling requirements. This materials selection also enables high case and storage temperatures, up to 150°C. Finally, the module is based on high-performance materials such as AlSiC baseplate, AlN substrates and Silver Sintering in order to offer near perfect CTE matching with SiC devices and high robustness against thermal and power cycling.

Co-designing the gate driver with the power module in a single IPM allowed CISSOID to optimize the gate driver circuit taking into account parasitic inductances of the power module while minimizing them when possible. Minimizing parasitic inductances allows to switch SiC transistors faster and to lower switching losses. An IPM also offers a plug-and-play solution to power electronic designers who save a lot of time in the design of the gate driver board, which is particulary challenging with SiC transistors. They can then focus on the design of high density power converters taking advantage of SiC.

“It was a pleasure to work with CISSOID team in the frame of this Clean Sky program. They showed a great flexibility in proposing us solutions addressing the requirements of the next generation of high density power converters for the More-Electrical-Aircraft”

said Taoufik Bensalah, Power Converter Design Team Manager at Thales Avionics. Etienne Vanzieleghem, VP Engineering at CISSOID added: “We are very glad with this fruitful cooperation with Thales and with the open discussions we had in specifying this IPM. We also thank Clean Sky for making this cooperation possible which is a good example of CISSOID combined expertise in packaging and circuit design. This project was also an opportunity to strengthen our cooperation with PRIMES platform in Tarbes which is hosting CISSOID packaging team.”

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Mitsubishi Electric to release standardized HVIGBT Module X-Series

Mitsubishi Electric Corporation announced today that it has developed a next-generation power module called X-Series New Dual HVIGBT module for traction and electric power applications in heavy industries. The new module features higher power density and efficiency for inverters, as well as a standardized package that allows for a flexible design of inverter systems.

Samples of the 3.3kV (LV100) version of the New Dual module will be available for shipping from March 2017. That will be followed by 1.7kV, 3.3kV (HV100), 4.5kV and 6.5kV versions in that order from 2018 onwards. The company also plans to add a lower-than 1.7kV version to the lineup in the future.

High-power modules are key devices for controlling power conversion in electronic systems in a wide range of power classes from several kilowatts up to several megawatts. Until now, modules with a maximum voltage rating of up to 6.5kV and a maximum current rating of several thousand amperes have been commercially available.

The New Dual HVIGBT module will satisfy demand for efficient, high power density semiconductor devices with a range of current and voltage ratings, while contributing to higher power output and efficiency in inverters by adopting the latest seventh-generation IGBTs and RFC diodes. Meanwhile, the standardized package dimensions will allow manufacturers of industrial electronics to simplify design and secure multiple sources for inverters.

Product Lineup (plan)

Model Package
type		 Isolation
voltage		 Collector-emitter
voltage		 Maximum
current
rating		 Connection Dimensions Sample
availability
HVIGBT
module
X-Series
New Dual		 LV100 6kV 1.7kV 900A 2in1 W:100mm
x
D:140mm
x
H:40mm		 2018 or later
3.3kV 450A March 2017
HV100 10kV 3.3kV 450A 2018 or later
4.5kV 330A
6.5kV 225A

 

Product Features:

  1. Contributing to high energy efficiency and high power density
    • The seventh-generation IGBTs adopting CSTBTTM and RFC diodes realize low power loss in inverter systems.
    • Improved package technology and low parasitic inductance enable maximum performance.
    • Three AC main terminals on the LV100 package spread and equalize current density, contributing to increased inverter capability.
  2. Common frame size supports more diverse inverter configurations and capacity
    • LV100 and HV100 modules have a common package design.
    • Simple, standard connections allow for optimal system design and a range of current ratings.
    • Lineup ranges from 1.7 to 6.5kV.
    • Improved flexibility and scalability for system configuration.
  3. Contributing to higher design efficiency by the use of a standardized new package
    • Compatible with terminal and attachment locations of Infineon Technologies AG (Germany) products.

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X-FAB offers high-volume 6-inch SiC foundry production

X-FAB Silicon Foundries of Erfurt, Germany – a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) foundry from its wafer fabrication plant in Lubbock, Texas.

The firm says that, due to major internal investments in the conversion of capital equipment (as well as the support provided by the PowerAmerica Institute at North Carolina State University), X-FAB Texas has heavily upgraded its manufacturing resources in order to be ‘SiC-ready’. Among the tools now added are a high-temperature anneal furnace, backgrind equipment for thinning SiC wafers, backside metal sputter and backside laser anneal tools. A high-temperature implanter is scheduled for installation later this year. X-FAB can hence now fully leverage the economies of scale that are already available in its established 30,000 wafer per month silicon line, presenting the market with the means to produce large volumes of SiC devices on 6-inch wafers.

X- FAB says that, as well as its 6-inch wafer capabilities, other key differentiators include higher yields and accelerated ramp-up to full-scale production, plus decades of experience in manufacturing semiconductor devices that adhere to the most stringent quality standards (such as those for automotive applications). The firm will not only supply fabless semiconductor vendors but also act as a second source for integrated device manufacturers (IDMs) with their own SiC production capabilities.

“Current SiC offerings are either IDMs creating their own products or relatively small foundry operations using 4-inch production facilities,” says Andy Wilson, X-FAB’s director of strategic business development. “X-FAB is bringing something different to the market, with a SiC capacity of 5000 wafers/month ready to utilize and potential to raise this further,” he adds. “We can thus offer a scalable, high-quality, secure platform that will enable customers to cost-effectively obtain discrete devices on SiC substrates and also safely apply vital differentiation.”

In 2015, SiC diode and MOSFET supplier Monolith Semiconductor Inc of Ithaca, NY, USA relocated its headquarters from Ithaca, New York, to Round Rock, Texas, following a strategic partnership announced in 2014 for the manufacture of its SiC switches in X-FAB Texas’ high-volume 150mm silicon production line.

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Pi Innovo and GaN Systems to promote GaN in automotive

A collaboration between Pi Innovo’s electronics design and development expertise and GaN Systems’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles.

Based on GaN Systems’  technology, gallium nitride devices use GaN-on-silicon base wafers. The company manufactures a range of gallium nitride power transistors for automotive, consumer, datacenter, industrial and solar/wind/smart grid applications.

Pi Innovo has designed and implemented custom motor control electronics to take advantage of the benefits of GaN Systems semiconductors in applications with a range of input voltages from 12V to 300V. This controller design provides a functional starting-point for the development of 48V and above, high-speed motor-driven vehicle systems, and adds to a growing portion of Pi Innovo’s business providing custom electronics solutions across multiple markets.

PI Innovo GaN Systems motor drive for electric vehicle

Following the success of this GaN-based multi-voltage motor controller development project, Pi Innovo is now offering design and development services in support of customers looking to adopt this technology for a wide range of electronics design applications in automotive and adjacent markets. The company is positioned to support customers wanting to develop prototype evaluations to quantify the benefits of GaN technology. Pi Innovo can also provide customized cost effective high volume designs for customers looking to go into production.

“Pi Innovo’s hardware, software and applications engineers worked closely with the GaN Systems team to understand their semiconductor design requirements and to ensure the final controller design maximizes the reduction in size, weight and power consumption benefits that gallium nitride semiconductors provide,”

said Dr. Walter Lucking, CEO of Pi Innovo.

“Working with GaN Systems on this project has been a great experience for our team and we’re looking forward to continuing our close partnership to support our customers on many future designs.”

“Having a technology development partner like Pi Innovo that really understands the intricacies of control electronics design for vehicle applications, is invaluable in supporting the continued adoption of GaN in the electrification of vehicle systems,” said Jim Witham, GaN Systems’ CEO.

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