EPC Corp. release new high performance GaN power transistors

EPC corp. Logo

Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide significant reduction in RDS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

The new family of eGaN FETs cuts on-resistance, (RDS(on)), in half, enabling high current, high power density applications.Improved Figure of Merit (FOM)
The latest generation of eGaN FETs cuts the hard-switching FOM in half compared with the previous generation for improved switching performance in high frequency power conversion applications.

Extended Voltage Range:
Extending the performance benefits of GaN to 30 V enables higher power DC-DC converters, Point-of-Load (POL) converters, synchronous rectifiers for isolated power supplies, PCs, and servers.Better Thermal Performance
Increased temperature capabilities and improved die layout improve the thermal and electrical performance of the Gen 4 family of devices allowing for higher power operation under all conditions.

Demonstrated Power Conversion Efficiency Improvements:

To demonstrate the improved performance of these new eGaN FETs, two buck converters were built. The EPC9018combines the 30 V EPC2023 FET as the synchronous rectifier with the 40 V EPC2015 as the control switch of a 12 V – 1.2 V DC-DC point of load (POL) converter.

The 12 V to 1.2 V, 40 A POL converter operating at switching frequency of 1 MHz achieved efficiencies above 91.5% and demonstrated the superior in-circuit performance of the latest generation of eGaN power devices compared to the state-of-the-art Si MOSFET modules.

The EPC9019, a 48 V – 12 V converter, uses the 80 V, EPC2021 as the synchronous rectifier switch with the 100 VEPC2001 as the control switch. The results of this 48 V to 12 V, 30 A non-isolated DC-DC intermediate bus converter operating at a switching frequency of 300 kHz achieved efficiencies above 98%, again significantly outperforming a comparable converter using state-of-the-art silicon power MOSFETs.

Price and Availability:

Pricing for the EPC2019 – 24 power transistors at 1K units starts at $3.14 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Development Boards

Pricing for corresponding development boards start at $104.40 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Additional Information

Design Information and Support for eGaN FETs:

Download EPC eGaN FET datasheets at http://epc-co.com/epc/Products.aspxDownload development board Quick Start Guides: http://epc-co.com/epc/Products/DemoBoards.aspxApplication Note: Fourth Generation eGaN FETs Widen the Performance Gap with the Aging MOSFET athttp://bit.ly/EPCAN017Watch short video presentation of Fourth Generation products: http://epc-co.com/epc/DesignSupport/TrainingVideos/Generation4eGaNFETs.aspx

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BASiC 3C awarded 250k$ to develop low cost 3C SiC wafers

Gov. John Hickenlooper and the Colorado Office of Economic Development and International Trade (OEDIT) announced the Advanced Industry Accelerator Grant Program grantees.

 BASiC 3C is developing cost effective cubic Silicon Carbide (3C-SiC) wafers produced in Colorado for power device manufacturers. While SiC is becoming the material of choice over Silicon (Si) and Gallium Nitride (GaN) for middle to high-end power device development, the traditional “4H” SiC material continues to experience issues in defects, stress, wafer diameter scaling and costs.

The “HFCVD” from BASiC 3C process for manufacturing 3C Silicon Carbide wafers is a breakthrough technology that enables a new generation of power devices for existing and new markets.The patented technology delivers 3C-SiC substrates which enable price/performance leading devices operating at higher voltage, higher power, faster switching speeds and elevated temperatures.

It allows scalable “3C” SiC wafers (4”, 6”, 8” & 12”) with less defects, improved electron mobility that yields lower cost devices with greater performance.

The result is smaller, lighter, efficient electric vehicle power trains and more efficient components in the SmartGrid.

BASiC 3C is backed by Innosphere Rocky mountain incubator.

Sources:

http://www.advancecolorado.com/news/advanced-industries-accelerator-program-awards-almost-2-million-colorado-organizations

http://www.innosphere.org/page.asp?NavID=7

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Enkris Semiconductor shows 1600V breakdown GaN HEMT on 200mm Si wafer

Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200mm Silicon (GaN-on-Si) by using an AIXTRON CRIUS® II Close Coupled Showerhead® Reactor.
GaN-on-Si power devices have attracted much attention from both academics and industry recently because of their potential applications in power electronics. Due to the defective nature of heteroepitaxial GaN layers grown on silicon, GaN-on-Si power devices have suffered from high buffer leakage. Most recently, Enkris Semiconductor has produced high voltage GaN HEMT materials on 200mm silicon with excellent uniformity and low buffer leakage combined with excellent thickness uniformity of <0.5% without edge exclusion. Under special conditions the uniformity value can be improved even further.

Enkris-wafer-image

Figure 1 Thickness mapping of 200mm GaN-on-Si wafers

“It has been well accepted that GaN on large size silicon substrates is the most cost-effective way to achieve high volume production of GaN power devices. However, a large wafer bow combined with a high buffer leakage has hindered the further development of the GaN-on-Si technology so far. Our process on 200mm silicon substrates shows that high breakdown voltage (>1600V) GaN power devices with low leakage currently can be achieved with relatively thin buffer layers of 4 µm. They simplify the growth process, minimize the wafer bow and reduce the epi-cost significantly. Based on our processes which were applied on AIXTRON’s CRIUS® system, GaN-on-Si power devices may reach even higher voltages in the near future,” comments Dr. Cheng Kai, co-founder of Enkris.

Enkris-wafer-graphDr. Frank Wischmeyer, Vice President Power Electronics at AIXTRON, says “Enkris‘ remarkable success in achieving excellent layer quality and material properties show the capability of the Closed Coupled Showerhead® technology for high voltage GaN HEMT applications. The MOCVD technology is enabling the integration of wide band-semiconductors on large diameter silicon substrates. AIXTRON is committed to support the power electronics industry advancing toward high volume 200mm GaN-on-Si device manufacturing.”

About Enkris Semiconductor
Enkris Semiconductor, Inc. is located in Suzhou, Jiangsu, China. The company’s main products are GaN epi-wafers for electronics applications including both wireless communications and high voltage power switching devices.

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Motiv PS raises 7.3M$ for electric truck powertrain

The electric truck supplier of control systems to the growing electric truck market, Motiv Power Systems, raised $7.3 million in growth capital from investors led by Colorado’s Magness Investment Group. The funding comes as the second Motiv-equipped all-electric school bus is delivered to Kings Canyon Unified School District.

“Motiv has cracked the code on electric trucks,” said Gary Magness, Manager of the Magness Investment Group. “We are impressed with how Motiv’s approach leverages the existing truck and bus builder ecosystem to achieve scalability. I’m pleased to be a part of this revolution in trucking that brings environmental sustainability and significant fuel savings to an industry that’s the backbone of our economy.”

The Motiv electric Powertrain Control System (ePCS) is unique in the industry as a single product suite that can electrify any truck or bus chassis with a variety of commercially-available battery packs and motors. The Motiv ePCS, battery packs and motor are installed to replace the engine and transmission of a new incomplete chassis such as the Ford E450 in a ship-through modification.  This process, common in the truck industry, is similar to a Compressed Natural Gas ship-through modification and means minimal changes between the fossil fuel and electric versions of the final vehicle.  Existing truck and bus builders who already use these incomplete chassis can build and sell electric versions of their existing truck and bus models.

“It’s an honor to have the support of an investor like Mr. Magness,” said Motiv CEO Jim Castelaz.  “Not only does he see the potential in the market we are addressing, he understands our approach and believes in our vision of breaking the complete dependence trucks and buses currently have on fossil fuel.”

About Motiv Power Systems

Founded in 2009 and based in Foster City, CA, Motiv Power Systems designs and builds an electric Powertrain Control System (ePCS) for commercial truck and bus builders who use it to create all-electric versions of vehicles such as box trucks, flat-/stake-bed trucks, refrigerated trucks, utility/service trucks, shuttle buses, school buses, delivery vehicles and refuse trucks.

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Infineon: From R&D to production on 300mm power devices

Infineon Technologies AG is expanding its Austrian site in Villach. Core emphasis is the on the expansion of expertise for the manufacturing of the future as well as research and development (R&D). “Pilot Space Industry 4.0” will realize and put to the test an innovative concept for networked and knowledge-intensive production. Research on new materials and technologies will also be intensified. Infineon’s expansion plans foresee investments and research costs amounting to a total of € 290 million, creating approximately 200 new jobs in the period from 2014 to 2017, primarily in R&D.

Peter Schiefer, President of Operations at Infineon Technologies and responsible for the worldwide production sites, explains:

“The continuing development of Villach is a part of our group-wide manufacturing strategy. At the site, important developments will be advanced and production-ready innovative technologies will be transferred by Infineon to other sites. At the same time our strategy will include expansion of our volume manufacturing on 300 millimeter thin wafers in Dresden and on 200 millimeter wafers in Kulim, Malaysia.”

Sabine Herlitschka, CEO of Infineon Technologies Austria AG, says:

“With the expansion concept Villach is reinforcing its important role as a factory of innovation and a competence center for power electronics within the corporate group. We’re making an important contribution to the success of the company by coupling the innovation factory in Villach with volume production in Dresden using the example of 300 millimeter thin wafer production for power semiconductors.”

Herlitschka added that this move will also develop a unique production cluster in Austria and Germany that is prominently visible throughout Europe.

Industry 4.0 Pilot Space

Infineon will construct a leading-edge building complex for research, production and measurement technology workstations. Logistics, miscellaneous infrastructures and the plant equipment will also be expanded to meet future demand. This will let Infineon mobilize the productivity and automation called for in international competition, while at the same time increasing flexibility.

Infineon has been actively engaged in the Industry 4.0 initiative from the very beginning; its pilot space in Villach is another step towards realizing this vision. Industry 4.0 embodies a paradigm shift in value creation and brings enormous opportunities to European industry. The Infineon Austria project is an important contribution towards increasing European competitive strength. The pilot operation in Villach will feature production based on a cyber-physical system with highly modern production control and automation systems. Under the prerequisite of the highest possible data security and data integrity levels, the interaction of man and machine will attain a new dimension in the pilot facility. At the same time, Infineon will continue to pursue its goal of increased energy efficiency in production.

New Materials and Technologies

A wide-scale research program with innovations in materials, processes, technologies and system expertise is the second pillar of the Villach site expansion, supporting development of the next generation of energy-efficient products. Here the program focuses on the integration of innovative substrates such as gallium nitride and silicon carbide, on MEMS (Micro-Electro-Mechanical Systems) and sensor technologies as well as on the continuing development of 300 millimeter thin wafer technology.

Regional Expertise

The many years of growth at Infineon Technologies Austria AG have been supported by a tightly knit collaborative network connecting the company, the city of Villach, the Austrian province of Carinthia, the Republic of Austria and European institutions. As a result it has been possible to turn southern Austria into a high-tech region and to contribute to raising the region’s profile and increasing its competitive strength in the sense of “Smart Specialization”. With the “Pilot Space Industry 4.0” project Infineon is taking the next step in development, meaning it will also collaborate even more intensively with research partners, universities, technical institutes and SMEs in the innovation system. Peter Kaiser, Governor of the Austrian province of Carinthia, comments: “Carinthia and Infineon are an excellent fit, in terms of Innovation, Investment and Internationality. This Triple-I is the spirit of Carinthia in international competition and also stands exactly for Infineon as one of the internationally successful corporate leaders of our province. Together we’ll write many success stories like ‘Pilot Space Industry 4.0’. Such investments are proof of confidence in reforms and continuing development plans for our attractive, future-oriented business location Austria.”

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GaN Systems is expanding: new HQ and R&D facility

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has moved into its new headquarters and R&D facility at 1145 Innovation Drive, in the heart of Kanata’s high-tech community.

The firm says the move was necessitated by its expansion over the past 12 months, and it plans for continued rapid growth as GaN devices replace legacy silicon-based semiconductors in power conversion and control applications worldwide.

“These new facilities will provide the resources and capabilities we need as we move rapidly from R&D to commercialization this year,”

says CEO Jim Witham. The new HQ and R&D facility is three times larger than the previous premises, with a tenfold increase in laboratory space. The labs have dedicated power and cooling.

“When you produce devices that can switch 200A or more, it calls for some highly specialized facilities to fully test them,” explains co-founder & president Girvan Patterson. “The power available in this location and our custom-designed labs will enable us to fully explore higher-power applications and substantially accelerate the long-term reliability testing of our devices.”

Staffing has already increased significantly over the past six months, and GaN Systems has expanded its global team as its power conversion devices (based on its proprietary Island Technology) are commercialized.

 Source: http://www.semiconductor-today.com/news_items/2014/JUN/GANSYSTEMS_240614.shtml?utm_source=Twitter&utm_medium=Twitter&utm_campaign=Twitter

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Enphase Energy Launches Fourth-Generation Microinverter System in Europe

The Red Oak Park, a neighborhood in Boulder, CO, features renewable energy design. (Photo by Dennis Schroeder / NREL)

Enphase Energy, Inc. today announced its fourth-generation Enphase® System is shipping in Europe. The Enphase System now includes the M250 Microinverter, which produces 250-Watts rated AC output power. In addition, the Envoy Communications Gateway, with a Wi-Fi option, connects to the Enlighten software platform to deliver a new standard in solar system intelligence and reliability.

Enphase is the number one inverter used in residential solar in the Americas, according to an IHS report. The company has accelerated business momentum in its international markets as well, most notably in the UK, France and the Netherlands.

“We are excited to introduce the fourth-generation Enphase System to our customers across the UK and our core European markets,” says Olivier Jacques, managing director, EMEA, for Enphase Energy. “Leveraging the successful introduction of our fourth-generation System in the U.S. last year, we continue to set the bar for inverter quality, performance and reliability in EMEA.”

Enphase M250 Microinverter:

Optimized for high-power solar modules, the M250 Microinverter produces 250-Watts rated AC output power and pairs with modules up to 310W. The M250 is rated at 95.7 percent EU efficiency and has been built to withstand the harshest environmental conditions. It is IP67 rated and has undergone over one million hours of testing in extreme temperature and humidity environments prior to launch. This level of quality testing and assurance is unprecedented amongst microinverters, setting a new standard for reliability in the industry. In addition, the new Enphase System continues to be supported by an industry-leading 20-year warranty.

The new fourth-generation Enphase M250 Microinverter is available now through authorized distribution in the UK, France, Benelux, Switzerland, Germany (<4kWp) and Italy (<3kWp). The current M215 Microinverter will remain available for European customers in addition to the introduction of the M250.

For more information about the fourth-generation Enphase System, visit: enphase.com/uk countries. To sign up for new training available for the M250, visit our WEBEX PAGE.

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The Switch to be acquired by Yaskawa Electric Corporation

Yaskawa Electric Corporation, a world leader in motion control and robotics, today announced that it has signed a definitive agreement to acquire The Switch, a supplier of megawatt-class permanent magnet generator and full-power converter packages for wind power and other renewable energy applications. This acquisition will support both companies’ strategic objectives and strengthen their international presence. The estimated schedule for closing the deal is within a few weeks.

The Switch Marine Motor

The Japan-based Yaskawa System Engineering Division has been focusing on growing its market share in renewable, marine and industrial applications over the past few years. In autumn 2013, the two companies entered a strategic collaboration agreement whereby Yaskawa gained access to The Switch’s proven capability in megawatt-class power generation and The Switch was able to develop its presence in Japan.

“This acquisition is a natural next step forward from our initial strategic collaboration. Over the months, we have learned more about our strengths and now understand better how to leverage our synergies,” says Hiroyuki Ougi, Yaskawa’s Corporate Senior Vice President, General Manager, System Engineering Division. “Now we can both gain access to new global markets with our wider range of innovative products.”

The product portfolios of The Switch and Yaskawa complement each other well for applications in renewables, marine and industry. Permanent magnet (PM) machines and low-voltage converters from The Switch range from 500 kW to 8.0+ MW, whereas Yaskawa offers medium-voltage converters that extend the offering to large wind turbines and other applications. Yaskawa’s global network will be used to promote The Switch’s products in wind power, marine and industrial applications.

“From our customers’ point of view, this acquisition ensures global availability of The Switch offering. Yaskawa is an industrial company that understands our strengths and shares our strategic views. With close cooperation with Yaskawa group we can further extend our offering and can serve better our customers in a broader range of wind and marine applications as well as numerous other industrial applications,” says Jukka-Pekka Mäkinen, President and CEO of The Switch.

Yaskawa with its strong expertise in inverter technology is an ideal partner for The Switch. The Switch brand will continue as its own entity for selected markets and applications. Given the ongoing woes in the renewable energy markets, the acquisition by Yaskawa will give The Switch the firm foundation and power boost needed to enable it to continue to move forward along its fast-track path of advancing the world with electrical drive trains.

About the switch:

With 7 GW of installed wind power capacity, The Switch is a leading supplier of megawatt-class permanent magnet generator and full-power converter packages that effectively capture power from highly variable new energy sources like wind. The technology ensures reliable, future-proof grid compliance and maximized energy yields. Starting operations in 2006, The Switch reported net sales of EUR 46.2 million in 2013. The Switch is headquartered in Vantaa, Finland.

 

About Yaskawa Electric corporation:

Yaskawa Electric provides core technologies focused through the fields of Motion Control, Robotics Automation, and Systems Engineering aimed at enhancing customer return. Since it was founded in 1915, Yaskawa Electric has provided the best in products and technology to the market. From motor applications, advancement of industrial automation, creation of Mechatronics, and cutting edge robotics, Yaskawa has continuously been at the forefront of each era.

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