Rohm’s new 1700V SiC MOSFET officially available

ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters.

In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and manufacturing equipment. In the majority of auxiliary power supplies, which are used to provide drive voltages for power supply circuits, control ICs, and various supplementary systems, high breakdown (1000V+) silicon MOSFETs are normally utilized. However, these high-voltage MOSFETs suffer from large conduction loss (often leading to excessive heat generation), and present problems related to mounting area and the number of external components, making it difficult to reduce system size. In response, ROHM developed low-loss SiC MOSFETs and control ICs that maximize performance while contributing to end-product miniaturization.

Rohm-sic-boardgraph

The SCT2H12NZ provides the high breakdown voltage required for auxiliary power supplies in industrial equipment. Conduction loss is reduced by 8x over conventional silicon MOSFETs, contributing to greater energy efficiency. And combining with ROHM’s AC/DC converter control IC designed specifically for SiC MOSFET drive (BD7682FJ-LB) will make it possible to maximize performance and improve efficiency by up to 6%. This allows smaller peripheral components to be used, leading to increased miniaturization.

1. Optimized for auxiliary power supplies in industrial equipment
Compared to 1500V silicon MOSFETs used in auxiliary power supplies for industrial equipment, the SCT2H12NZ provides higher breakdown voltage (1700V) with 8x smaller ON resistance (1.15Ω). In addition, the compact TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment. ROHM is releasing a surface mount type (TO268-2L) that also provides adequate creepage distance.

2. Improved efficiency when combined with ROHM’s dedicated IC
Using this latest SiC MOSFET in combination with ROHM’s AC/DC converter control IC (BD7682FJ-LB) designed specifically for SiC MOSFET drive will make it possible to maximize performance and increase efficiency by up to 6%. At the same time heat generation will be reduced, minimizing thermal countermeasures and enabling the use of smaller components.

3. Simply evaluation by using ROHM’s evaluation board for SiC devices
As a comprehensive semiconductor manufacturer, ROHM offers a broad lineup of ICs optimized for use with a variety of SiC devices. ROHM is also launching evaluation boards and kits that make it possible to immediately begin evaluation and development. In addition to the BD7682FJ-LB-EVK-402, a gate drive board for evaluating ROHM’s full SiC module along with a snubber module are offered. More information can be found on ROHM’s dedicated support page.

Applications
Auxiliary power supplies for high voltage (i.e. 400VAC) industrial equipment such as factory automation (robots), solar and industrial inverters, and manufacturing/testing devices

Part Number Package Polarity VDSS ID PD
(Tc=25ºC)		 RDS(on)
VGS=18V		 QG
VGS=18V
NEW SCT2H12NZ TO-3PFM Nch 1700V 3.7A 35W 1.15Ω(typ.) 14nC (typ.)
Under Development SCT2H12NY TO-268-2L
(Surface Mount)		 4A 44W
Under Development SCT2750NY 5.9A 57W 0.75Ω(typ.) 17nC (typ.)
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Infineon to acquire Wolfspeed for $850M

Infineon Technologies AG and Cree, Inc. announced today that Infineon has entered into a definitive agreement to acquire the Wolfspeed Power and RF division of Cree. The deal also includes the related SiC wafer substrate business for power and RF power. The purchase price for this planned all-cash transaction is US Dollar 850 million (approximately Euro 740 million). This acquisition will enable Infineon to provide the broadest offering in compound semiconductors and will further strengthen Infineon as a leading supplier of power and RF power solutions in high-growth markets such as electro-mobility, renewables and next-generation cellular infrastructure relevant for IoT.

Dr. Reinhard Ploss, CEO of Infineon Technologies AG, said: “Joining forces with Wolfspeed represents a unique growth opportunity. Wolfspeed’s and Infineon’s businesses and expertise are highly complementary, bringing together industry leading experts for compound semiconductors. This will enable us to create additional value for our customers with the broadest and deepest portfolio of innovative technologies and products in compound semiconductors available in the market. With Wolfspeed we will become number one in SiC-based power semiconductors. We also want to become number one in RF power. This will accelerate the market introduction of these innovative technologies, addressing the needs of modern society – such as energy efficiency, connectivity and mobility.”

Infineon's wolfspeed acquisition conditions - Cree

Extract from Infineon presentation

Chuck Swoboda, Cree Chairman and CEO, said: “After much consideration and due diligence over the past year, we concluded that selling Wolfspeed to Infineon was the best decision for our shareholders, employees and customers. We believe that Wolfspeed will now be able to more aggressively commercialize its unique silicon carbide and gallium nitride technology as part of Infineon.”

Frank Plastina, Wolfspeed CEO, said: “By joining the Infineon team, Wolfspeed will now have all the advantages of a global company in our sector, including the ability to leverage Infineon’s market reach and infrastructure. With Infineon’s complementary culture and additional investment, we’ll be better positioned to unlock the potential of our portfolio and our people.”

Wolfspeed is based in Research Triangle Park, North Carolina, USA, and has been a part of Cree for almost three decades. Wolfspeed is a premier provider of SiC-based power and GaN-on-SiC-based RF power solutions. This also includes the related core competencies in wafer substrate manufacturing for SiC, as well as for SiC with a monocrystalline GaN layer for RF power applications. With these competencies, more than 550 highly skilled employees and a strong IP portfolio of approximately 2,000 patents and patent applications, this deal complements Infineon’s previous acquisition of International Rectifier in early 2015.Wolfspeed’s SiC-based product portfolio ideally adds to Infineon’s offering.

Infineon's wolfspeed acquisition conditions - Cree

Infineon’s wolfspeed acquisition conditions – Cree

Power management solutions based on compound semiconductors have several advantages enabling Infineon’s customers to develop systems with higher energy-efficiency, smaller footprints and lower system costs. Combining the comprehensive portfolios of technologies, products and manufacturing capabilities, Infineon and Wolfspeed will accelerate the development of components enabling customers to develop differentiating systems. Major areas where the applications will profit from SiC are renewables and especially automotive. Both areas benefit from the increased power density and improved efficiency. In automotive it fits well with the recent increased commitment of the industry to plug-in hybrid and all-electric vehicles (xEV). Combining both portfolios and competencies will significantly accelerate the time-to-market for new products based on compound semiconductors.

Next-generation cellular infrastructure standards such as 5G and beyond will use frequencies up to 80 gigahertz. Only advanced compound semiconductors can deliver the required efficiencies at these high frequencies. GaN-on-Si allows higher levels of integration and offers its advantages at operating frequencies of up to 10 gigahertz. GaN-on-SiC enables maximum efficiency at frequencies of up to 80 gigahertz. Both technologies are crucial for next generation cellular infrastructure standards. Together with its Si-based LDMOS products Infineon is the industry’s most complete provider for RF power components.

The combined portfolio advances Infineon’s strategic “Product to System” approach. Additionally, Infineon will benefit from accelerating the adoption of SiC- and GaN-based components in early-adopter markets, e.g. electro-mobility, high-end photovoltaic inverter, xEV charging infrastructure, and RF power components in cellular infrastructure.

The business to be acquired by Infineon has generated pro-forma revenues of US Dollar 173 million in the twelve months ending March 27, 2016. The acquisition will be immediately accretive to Infineon’s adjusted earnings-per-share and margin. Infineon will fund the transaction with bank financing of US Dollar 720 million and US Dollar 130 million of cash-on-hand. Infineon will maintain its strong balance sheet after the cash- and debt-financed transaction. Infineon’s capital structure will stay well within the previously communicated targets of Euro 1 billion gross cash plus 10 to 20 percent of revenue, and no more than two times the gross debt-to-EBITDA.

Cree’s Board of Directors and Infineon’s Supervisory Board have approved the acquisition. The closing of the transaction is subject to regulatory approvals in various jurisdictions and is expected by the end of calendar year 2016.

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Ingeteam takes over Bonfiglioli’s PV business

Ingeteam has reached an agreement with the Italian based company Bonfiglioli Riduttori, to take over its solar PV business. This will allow Ingeteam to strengthen its international positioning in the solar sector, directed at increasing its product sales and operation and maintenance business.

Ingeteam has more than 16 years’ experience in the PV sector, where it has supplied 5 GW of power at a global level, firmly establishing the company’s position as a leading operation and maintenance services provider. Ingeteam manufactures a wide range of solutions for the Solar sector, offering residential, commercial and utility scale grid-connected PV inverters, as well as medium voltage power stations and battery inverters for off-grid and grid-connected operation.

Ingeteam new multiple PV inverter photovoltaic production 40kW 28kW

Active in the solar industry since 2008, Bonfiglioli designs, manufactures and supplies grid-tie central inverters for solar installations and provides ongoing support throughout the entire installation lifecycle. With an installed base of approximately 3 GW, Bonfiglioli boasts a significant project pipeline for the next few months. Based on this agreement, Ingeteam takes over Bonfiglioli’s solar business, including the operation and maintenance activities.

Through this operation, Ingeteam has secured access to a sizable PV project pipeline and increased its operation and maintenance services business by adding Bonfiglioli’s 3 GW to its 6.5 GW of installed capacity under maintenance globally.

“This strategic integration will enable us to significantly strengthen our presence in the United States and India, which are two key markets in the PV sector for Ingeteam”, affirmed David Solé, Managing Director of Ingeteam’s Energy Division.  “Ingeteam is strongly committed to increase its renewable presence worldwide and the management team continues to seek additional opportunities to accelerate growth”, said Javier Coloma, CEO at Ingeteam Power Technology.

“Exiting the solar business is part of the strategic plan to focus on our core business and we saw in Ingeteam the right partner to take it to the next level”, said Tiziano Pacetti, CEO Corporate at Bonfiglioli.  “The solar business has been an incredible catalyst in the past decade and the decision of disposing was difficult but, in order to preserve the solar business success, a strong and large partner in the renewable power conversion sector was needed and we are certain Ingeteam is as such”, added Fausto Carboni, CEO Business at Bonfiglioli.

Greentech Capital Advisors acted as exclusive financial advisor, and LGA – Lucchini, Gattamorta e Associati as legal advisor to Bonfiglioli.

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Murata Develops 1kW PV Inverter with 97% efficiency

Murata Manufacturing Co Ltd announced June 22, 2016, that it has developed a compact PV inverter with an output of 1kW.

“Micro-inverter,” which is used for each solar panel, is being proposed in the US as an advanced version of compact/decentralized PV inverters, which recently started to be introduced. However, micro-inverters have problems such as a high cost, low conversion efficiency and insufficient compatibility with regulations related to grid connection, according to Murata.

In view of this, Murata developed the 1kW product, “Mini-inverter,” as a PV inverter that features the advantages of both mainstream large-capacity/centralized PV inverters and compact PV inverters used for each panel. The new product controls several panels.

Murata designed high-efficiency circuits so that they can be stored in a compact, thin, light-weight case. As a result, the company realized a high conversion efficiency of 97% and a compatibility for grid connection, like conventional centralized PV inverters, with the compact PV inverter.

The service life of the Mini-inverter is 20 years, and it can drastically cut maintenance cost, Murata said. Data on the amount of power generated, etc is wirelessly transmitted (frequency: 920MHz). As a result, it becomes possible to eliminate the need for communication cables and to make the PV inverter work in conjunction with an HEMS (home energy management system) and BEMS (building energy management system).

The input and output voltages of the new PV inverter are 80-250V and 200V, respectively. And its dimensions are 450 x 160 x 50mm. Murata plans to start volume production of the product in fiscal 2017.

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TT Electronics has launched a Silicon Carbide (SiC) power MOSFET

 Sic MOSFET 2

TT Electronics today launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be used in applications, including distribution control systems with greater environmental challenges, such as those in close proximity to a combustion engine.

Supplied in a high power dissipation, low thermal resistance, fully hermetic, ceramic SMD1 package the 25A, 650V rated SML25SCM650N2B also ensures faster switching and low switching losses in comparison to normal Si type MOSFETs, consequently the size of the passive components in the circuit can be reduced resulting in weight and space saving benefits. The N-channel MOSFET features a total power dissipation of 90W at a TJ temperature of 25 degrees. A range of screening options are available.

For use in applications that require faster switching in high temperature power conversion topologies and systems, the SML25SCM650N2B will find favour with design engineers working in industrial power conversion applications including oil drilling, distributed management control systems, renewable energy applications / power conversion, space systems and applications.

Silicon Carbide is the new semiconductor technology of choice to help power electronic design engineers design with more efficiency, with higher operating temperatures to lay the foundation for future conversion and control system design demands. With the SML25SCM650N2B, the combination of new Silicon Carbide technology with a high reliability, industry standard outline hermetic packaging technology coupled with TT Electronics’ renowned Lutterworth based design and manufacturing capability delivers value and very high performance to the end customer.

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SMIC to buy 70% of LFoundry

Semiconductor Manufacturing International (SMIC) has reached an agreement with LFoundry Europe (LFE) and Marsica Innovation (MI) to acquire a 70% stake in LFoundry for EUR49 million (US$54.5 million), according to the companies.

LFoundry is headquartered in Italy and owned by LFE and MI. At the closing of the transaction, SMIC, LFE and MI will own 70%, 15% and 15% of LFoundry, respectively.

“Both SMIC and LFoundry will mutually benefit from the shared technology, products, human talents and complementary markets,”

said SMIC CEO Tzu-Yin Chiu. “This will additionally expand our production scale and allows us to service the automotive IC market and for LFoundry to enter into China’s consumer electronics market, thus bolstering our overall development and growth.”

SMIC’s total production capacity includes 162,000 8-inch wafers per month and 62,500 12-inch wafers per month, which represents a total 8-inch equivalent capacity of 302,600 wafers monthly. LFoundry’s capacity amounts to 40,000 8-inch wafers per month. Thus, by consolidating the entities, overall total capacity would increase by 13%; this combined capacity will provide increased flexibility and business opportunities for supporting both SMIC and LFoundry customers, the companies said.

SMIC has a diversified technology portfolio, including applications such as radio frequency (RF), connectivity, power management IC (PMIC), CMOS image sensors (CIS), embedded memory, MEMS, and others – mainly for the communications and consumer markets. Complementarily, LFoundry’s key focus is primarily in automotive, security, and industrial related applications including CIS, smart power, touch display driver IC (TDD”), embedded memory, and others. Such consolidation of technologies will broaden the overall technology portfolios and enlarge the areas of future development for both SMIC and LFoundry, the companies indicated.

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VisIC announced its new GaN based power device

VisIC Technologies is pleased to announce availability of its new generation of ALL-Switch V22S65A (with an internal SiC diode) and V22N65A (without internal SiC diode).

This new version of VisIC’s ALL-Switch significantly reduces the MILLER effect enabling readily available, standard drivers to be used in VisIC-based designs. These new devices also reduce the bill of materials required for specific applications.

Extremely effective in hard switching topologies, the V22 series may be used for Zero Voltage Switching or Zero Current Switching topologies. It has the lowest Rdson among either 650V GaN or SiC MOSFET transistors, and can achieve extremely efficient power conversion with slew rate exceeding 100V/nS.

In addition, since the threshold voltage exceeds 5V, the devices work well in harsh EMI environments.

VisIC Technologies has demonstrated worldwide record   with performance of its Half Bridge demonstration board, achieving better than 99.3 % peak efficiency at 200 kHz in a hard-switched topology providing 2.5KW output.

VisIC allswitch GaN device with integrated SiC diode

About VisIC Technologies Ltd

Based in Nes Ziona, Israel, VisIC Technologies, Ltd. was established in 2010 by experts in Gallium Nitride (GaN) technology to develop and sell advanced GaN-based power conversion products.  VisIC has successfully developed, and is bringing to market, high power GaN-based transistors and modules.  (GaN is expected to replace most of the Silicon-based (Si) products currently used in power conversion systems.) VisIC has been granted keystone patents for GaN technology and has additional patents pending.

For more information please access our website: http://www.visic-tech.com . The highest efficiency with GaN.

For additional information, please contact:
Eli Zenouda – Director Sales & Marketing
+972-54-2296641
eliz@visic-tech.com

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STMicroelectronics SiC MOSFET used in Zaptec portable EV charger

Silicon-carbide (SiC) power electronics from STMicroelectronics has been used in ZapCharger Portable, a small electric-car charging station from Zaptec, a start-up company in the transformer industry.

ZapCharger works with any electric car on any grid. ST’s SiC MOSFET[1] devices have enabled Zaptec engineers to design a portable, yet powerful piece of equipment.  The 3kg, 45 x 10 x 10cm charger delivers an energy efficiency of 97%.

SiC Silicon Carbide MOSFET Zaptec electric car charger

Courtesy of STMicroelectronics

Inside the ZapCharger, 32 Silicon Carbide MOSFETs from ST deliver efficient power conversion with minimum losses.

“The key for us was to find a power technology with a very high efficiency so we could reduce the overall size of the charger without compromising performance. ST’s silicon-carbide offering was the perfect match,” said Jonas Helmikstøl, COO, Zaptec.

After successful field tests, ZapCharger is starting pilot production now, with volume ramp-up scheduled at the end of Q3 2016.

 

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GE & Shinko Electric to commercialize Power Overlay

GE Ventures and SHINKO ELECTRIC INDUSTRIES CO., LTD. (SHINKO) announced that SHINKO has been granted a patent license and technology transfer of an advanced embedded packaging solution for power electronics called Power Overlay (POL).This patent license and technology transfer deal, signed in early 2015, is a strategic collaboration between GE and SHINKO in both technology and business development.
Developed by GE Global Research as part of a major GE focus in power electronics research over the last decade, POL has been licensed to SHINKO to industrialize the packaging platform to transition POL for manufacturing efforts to be utilized by GE and others. The platform enables higher efficiency and power density with reduced parasitics, and greatly impacting the power, telecommunications and consumer electronics industries. Power modules designed with POL have proven to have power densities up to 50% higher and efficiency improved up to 10%.
GE General Electric Shinko Power overlay POL power module packaging

Extract from “Packaging Challenges and Solutions
for Silicon Carbide Power Electronics” – ECTC 2012 – Ljubisa Stevanovic

“GE is extremely pleased to work with SHINKO on the commercialization of the POL technology – SHINKO brings world class manufacturing process and ability to transition new technologies to production,” said Pat Patnode, President of Licensing for GE Ventures.
GE Ventures accelerates innovation and growth for partners by providing access to GE technologies and inventions through licensing and joint development partnerships. This advanced microelectronics packaging technology is being licensed to leading global manufacturing partners to provide advanced solutions back to businesses worldwide and also to GE, as part of the GE Store.
“Through SHINKO’s extensive manufacturing knowledge, we will be able to achieve value added solutions in order to positively impact the power electronics industry,” said Masato Tanaka, Corporate Officer, General Manager – Research and Development Div. of SHINKO. “We look forward to these outcomes and collaborating with GE in the future.”
SHINKO is a worldwide semiconductor packaging supplier with diverse technology driven initiatives and industry leading manufacturing capabilities. The company is currently testing the POL packaging platform, with plans to release solutions in 2016.

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GlobalWafers to acquire Topsil Silicon wafer branch

Semiconductor-grade silicon wafer maker GlobalWafers has disclosed it will acquire a 100% stake in the wafer business unit of Denmark-based Topsil Semiconductor Materials A/S at Danish Krone 320 million (US$48.27 million).

GlobalWafers is a subsidiary solar wafer maker Sino-American Silicon Products (SAS).

Topsil is a globally main developer of FZ (float zone) wafer manufacturing process and a main producer of FZ wafers, GlobalWafers said. Topsil-produced FZ wafers are mainly used to make high- and medium-power devices used in heavy electric machines, automated industrial equipment, power-generating equipment, wind power-generating turbines and high-speed and mass rapid transit trains, GlobalWafers indicated.

The acquisition covers products, personnel, technology and business relations of Topsil’s wafer business unit as well as Topsil’s wafer factories in Denmark and Poland, GlobalWafers said. Through the acquisition, GlobalWafers can extend wafer manufacturing technology from CZ (Czochralski) process to FZ process and marketing presence from Asia and North America to Europe, the company indicated.

The acquisition is expected to be finished by the end of June 2016, GlobalWafers said.

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Nissan and Eaton release ‘xStorage’ – home energy storage solution

Electric car makers are to become Smart-grid system makers

In June 2015, PointThePower.com made an analysis of electric car manufacturing business and the link that will be made with energy grid and energy storage. This analysis is now becoming true. After Tesla, Daimler and Audi, it’s now Nissan’s turn to announce that they will use second-hand batteries for home energy storage.

So if you missed the analysis, here is a synthesis: Back in time, Alstom, Siemens, GE, Mitsubishi Electric and few other huge companies became both electric transport system makers and energy production or storage system makers. This happened because the core competency to target was Power electronics, and they mastered the topic. They either started with transportation systems to come to energy, or the other way round.

Now that the car market is becoming electric, and that energy production is coming down to consumer level, the same thing is happening. Car makers master “consumer power range” electric systems. So, you will soon see electric car makers becoming full energy supply-chain players, at lower power levels compared to Alstom and Siemens.

We performed this analysis almost one year ago: It’s still available in full here.

For more info about Nissan/Eaton solution, just read below:

Nissan and Eaton release “xStorage”

Nissan and Eaton, have joined forces to unveil a new residential energy storage unit. Available to pre-order from September 2016, the “xStorage” solution will give consumers possibility to control how and when they use energy in their own homes.

Connected to residential power supply or renewable energy sources such as solar panels, the unit can charge up when renewable energy is available or energy is cheaper (e.g. during the night) and release that stored energy when demand and costs are high.

The home energy storage system also provides a back-up solution to consumers, ensuring that the lights never go out. Moreover, customers can sell stored energy back to the grid when demand and costs are high.

 

Nissan Eaton Xstorage home storage battery

It’s providing a sustainable “second life” for Nissan’s electric vehicle (EV) batteries after their first life in cars is over, the new unit is powered by twelve Nissan EV battery modules and has the potential to revolutionize the way people manage energy usage in their own home, providing added flexibility and multiple cost savings.

“The collaborative development between Eaton and Nissan enabled us to optimize development and production costs and deliver a well-integrated offer to consumers. Our system will be provided to end-users completely ready to use, with all required elements including cabling and installation by a certified professional, at a starting price of €4,000 (£3200) for 4.2KWh nominal. Our policy is to avoid hidden extra costs and achieve a lower total cost of ownership than other major offers already announced.”

, said Cyrille Brisson, VP Marketing at Eaton Electrical EMEA.

The new xStorage system unveiled today marks the start of a longer-term commitment by Nissan and Eaton to widen the portfolio of energy storage solutions available to both private and commercial customers. Nissan and Eaton expect to sell more than 100,000 xStorage units within the next five years as the consumer appetite for this type of technology continues to grow.

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Ascatron raises 4 M€ to launch its own SiC devices product line

Ascatron develops power semiconductors based on Silicon Carbide (SiC) that radically reduce losses in electrical transformers. Ascatron focuses on high voltage applications where the energy savings will be very large by using SiC.

Ascatron SiC Silicon Carbide diode package 3DSiC high temperature

1200V SiC power diode for high temperature operation at 250°C

They have now completed the A-round financing intended for the final development of its first own SiC semiconductor products. The total of 4 M€ is shared between 3 M€ in equity capital, and
1 M€ in an innovation grant.

“We have started to implement our advanced material technology in a production equipment for SiC epitaxy”, says Adolf Schöner, CTO of Ascatron.

“The next step is to optimize our device design and outsource the remaining manufacturing of the chip to a foundry with capacity for volume production”.

The A-round investors are from Italy and China, including the four venture capital investors Quadrivio, Como Venture, Rise Leader Investment and InteBridge Technology, together with the equipment producer LPE. The grant comes from the European Institute of Innovation and Technology (EIT) through KIC InnoEnergy. KIC supports innovation projects in the field of sustainable energy.

“Our investors have a good mix of understanding both the advanced material technology needed for high performance SiC power devices, and how to address volume markets for semiconductors”

says Christian Vieider, CEO of Ascatron. “40% of the market for power electronic components is in China, and there is a lot of interest in SiC for energy saving”.

About Ascatron

Ascatron develops next generation Silicon Carbide (SiC) power semiconductors radically reducing electrical conversion losses. Target applications are process industry, data center, traction, wind power and grid transformers. With the 3DSiC® technology Ascatron makes doped device structures based on epitaxy, enabling device performance with very low losses and capacity to handle very high voltage. Ascatron started the operation in 2011 as a spin-out from the Swedish R&D institute Acreo, and has 10 employees in Sweden. www.ascatron.com

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