EPC Corp. release new half-bridge GaN transistors

EPC announces theEPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN^® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

The EPC2104 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density. The EPC2104 is ideal for high frequency DC-DC conversion and motor drive applications.

Development Board

The EPC9040 is 2” x 2” and contains one EPC2104 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.

Price and Availability

The EPC2104 monolithic half-bridge price for 1K units is $8,31 each

The EPC9040 development boards are priced at $137.75 each

Both are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

• Download datasheets at http://epc-co.com/epc/Products/eGaNFETs.aspx
• Download Demo Board design files: http://epc-co.com/epc/Products/DemoBoards.aspx