ExaGaN start the work to industrialize GaN FET on 8in. wafers

X-FAB Silicon Foundries and Exagan, a start-up innovator of Gallium Nitride (GaN) semiconductor technolog have entered into a joint development agreement to industrialize Exagan’s GaN-on-silicon technology, begin producing high-speed power switching devices on 200mm (8 in.) wafers and establish a European production center where the two partner companies will manufacture GaN devices. The two companies already have begun to demonstrate their capabilities by processing the first GaN-on-silicon devices built on 200mm substrates at X- FAB’s wafer fab in Dresden, Germany, and now are transforming that prototype into a process robust enough for the mass production environment.

Working with CEA-Leti in Grenoble, where some process steps are performed, X-FAB and Exagan are manufacturing the first of Exagan’s G-FETTM 650 Volt, fast-switching power devices on 200mm substrates using a standard silicon manufacturing line. Without the ability to use larger wafers in mass production, GaN-based semiconductors have not been available at a competitive price-performance point compared to other power-switching alternatives. Exagan’s breakthrough G-StackTM technology enables GaN-on-silicon devices to be manufactured economically on 200mm substrates by depositing a unique stack of GaN and strain management layers that alleviates the stress between bonded GaN and silicon layers. The resulting G-FET devices meet customer requirements for high breakdown voltage, low vertical leakage and high-temperature operation. These advanced semiconductors also allow greater power integration, which improves the efficiency and reduces the cost of electrical converters.

“Our strategic partnership with X-FAB is the latest step in establishing a robust supply chain capable of providing customers with qualified GaN devices in large volumes for demanding applications,” said Frédéric Dupont, president and CEO of Exagan.

“The industry has long acknowledged the performance and efficiency advantages of GaN devices. We are now driving GaN market penetration to the next level by providing these devices at an attractive price- performance point.”

About X-FAB

X-FAB is an analog/mixed-signal and MEMS foundry group manufacturing silicon wafers for automotive, industrial, consumer, medical and other applications. X-FAB’s analog-digital integrated circuits (mixed-signal ICs), sensors and micro-electro-mechanical systems (MEMS) are manufactured at five production facilities in Germany, Malaysia and the U.S. X-FAB employs 2,500 people worldwide. For more information, please visit www.xfab.com.

About Exagan

Founded in 2014 with support from CEA-Leti and Soitec, Exagan’s mission is to accelerate the power-electronics industry’s transition from silicon-based technology to GaN-on-silicon technology. Exagan is based in Grenoble and Toulouse, France. For more information, visit www.exagan.com.