Tag Archive for: mosfet

Wolfspeed expands 3rd Gen. 1200V SiC MOSFET

[EDIT: Infineon’s attempt to buy Wolfspeed is terminated since February 16th 2017.]

Wolfspeed, former power electronics division of Cree, has expanded its line of SiC (Silicon Carbide) MOSFETs. Generation 3, also called C3M(r) platform, features lower inductance and RdsON.

The 1200V device comes in addition to the 900V and 1000V devices previously available. It also comes in a new package as surface-mount 7L D2PAK, available in a few weeks. The more classics 4L TO-247 and SMD packages are already available, with respectively C3M0075120K and C3M0075120J part numbers. It’s a 30 A maximum current MOSFET, with as low as 75 mΩ RdsON.

For more details, you can check the datasheet here.

 

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STMicroelectronics boosts new MOSFET IPM up to 100W

STMicroelectronics has extended its SLLIMM™ nano series of Intelligent Power Modules (IPMs) for motor drives with more package options that help minimize overall size and complexity, extra integrated features, and greater efficiency leveraging the latest-generation 500V MOSFETs.

With a current rating of 1A or 2A, the new IPMs target applications up to 100 Watts, such as refrigerator compressors, washing-machine or dishwasher motors, draining and recirculation pumps, fans, and other drives running at less than 20kHz in hard-switching circuitries. Operation up to 150°C allows use in harsh environments.

The modules integrate a three-phase MOSFET bridge and gate-driver HVICs, with value-added features including an unassigned op-amp and comparator for functions such as over-current protection and current sensing. Additional built-in safety features include interlocking to prevent shoot-through currents from damaging MOSFETs of the bridge, a fault-status output, shutdown input, and smart-shutdown capability. An optional built-in thermistor helps simplify over-temperature protection.

In addition to the zig-zag lead option, the new series is also available in a line-lead package. These give designers extra flexibility to simplify the board layout and minimize controller size in mechatronic assemblies and other space-constrained applications.

The high thermal performance of the packages, combined with the superior efficiency of ST’s latest 500V MOSFETs, enhances designers’ freedom to minimize heatsink size or create heatsink-free solutions for lower-power applications. The low MOSFET on-resistance of 3.6Ω and 1.7Ω, in 1A and 2A variants, respectively, combines with low switching losses to ensure high overall energy efficiency. The MOSFETs have separate open-emitter connections to module pins, which simplifies use of three-shunt current sensing for field-oriented motor control (FOC) or single-shunt sensing for trapezoidal control. The modules also integrate the bootstrap diodes needed to control the high-side MOSFET gates, further minimizing demand for external components.

The STIPN1M50T-H, STIPN1M50-H, STIPN2M50T-H (L), and STIPN2M50-H are in production now, priced from $4.50 in the Dual Inline Package for orders of 1000 pieces.

For further information please visit www.st.com/ipm

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