Transphorm release its 3rd generation GaN FET

Transphorm Inc. today announced availability of its third generation (Gen III) 650-volt (V) GaN FETs. Power transistors built on Gen. III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications.

The latest evolution of Transphorms’ devices, Gen III, to be released include the TP65H050WS 50 mΩ FET and TP65H035WS 35 mΩ FET, both available in standard TO-247 packages. Technologically, the incorporation of a new MOSFET along with other design modifications enable Gen III devices to deliver:

An increased threshold voltage (noise immunity) to 4 V from 2.1 V for Gen II, eliminating the need for a negative gate drive.
A gate reliability rating of ±20 V; an 11 percent increase versus Gen II.

As a result, switching is quieter, and the platform delivers performance improvement at higher current levels with simple external circuitry.

Regarding learned design techniques, Transphorm published elegant solutions for oscillation suppression in its app note 0009: Recommended External Circuitry for Transphorm GaN FETs. Example recommendations include the use of DC-link RC snubbers and switching-node RC snubbers that add further stability without adverse impact on efficiency. Notably, the solutions can benefit half-bridge and bridgeless totem-pole PFC topologies.

“It’s important to us to evolve our GaN technology based on customer need and real-world experience. Our Gen III FETs exemplify what’s possible when we adhere to that basic philosophy,” said Philip Zuk, Vice President of Technical Marketing, Transphorm.

Gen III 650 V Product Line Details:

Availability: Currently shipping